The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Mar. 30, 2007
Rajesh A. Rao, Austin, TX (US);
Tushar P. Merchant, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Gowrishankar Chindalore, Austin, TX (US);
David Sing, Austin, TX (US);
Jane Yater, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Tushar P. Merchant, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Gowrishankar Chindalore, Austin, TX (US);
David Sing, Austin, TX (US);
Jane Yater, Austin, TX (US);
Freescale Semiconductor, Inc, Austin, TX (US);
Abstract
An electronic device can include a nonvolatile memory cell having DSEs within a dielectric layer. In one aspect, a process of forming the electronic device can include implanting and nucleating a first charge-storage material to form DSEs. The process can also include implanting a second charge-storage material and growing the DSEs such that the DSEs include the first and second charge-storage material. In another aspect, a process of forming the electronic device can include forming a semiconductor layer over a dielectric layer, implanting a charge-storage material, and annealing the dielectric layer. After annealing, substantially none of the charge-storage material remains within a denuded zone within the dielectric layer. In a third aspect, within a dielectric layer, a first set of DSEs can be spaced apart from a second set of DSEs, wherein substantially no DSEs lie between the first set of DSEs and the second set of DSEs.