The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2010

Filed:

Jan. 17, 2008
Applicants:

Wei-ming Liao, Taipei, TW;

Ming-cheng Chang, Taipei County, TW;

Inventors:

Wei-Ming Liao, Taipei, TW;

Ming-Cheng Chang, Taipei County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a semiconductor device includes providing a substrate and forming conductor patterns and openings on the substrate. Next the openings are filled with a mask layer and upper portions of the conductor patterns are etched to form cavities. Following, a portion of the mask layer is removed to form a trench between two neighboring conductor patterns, wherein the trench exposes the substrate and the sidewalls of the two neighboring conductor patterns. Next, an insulating layer on the cavities and the trench is conformably formed, a second conductive layer is formed on the insulating layer and the trench is filled with the second conductive layer.


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