The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Nov. 08, 2006
Applicant:
Tetsuya Kurosawa, Yokohama, JP;
Inventor:
Tetsuya Kurosawa, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract
An element is formed on the major surface of a semiconductor wafer, and a groove is formed in the back surface of the semiconductor wafer along a dicing line or chip dividing line by a mechanical or chemical method. A modified layer is formed by irradiating the groove with a laser, and the semiconductor wafer is divided by using the modified layer as a starting point. The back surface of the semiconductor wafer is removed to at least the depth of the groove.