The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2010

Filed:

Dec. 18, 2006
Applicants:

Brett M. Diamond, Monroeville, PA (US);

Matthew A. Zeleznik, Pittsburgh, PA (US);

Jan E. Vandemeer, Bethel Park, PA (US);

Kaigham J. Gabriel, Pittsburgh, PA (US);

Inventors:

Brett M. Diamond, Monroeville, PA (US);

Matthew A. Zeleznik, Pittsburgh, PA (US);

Jan E. Vandemeer, Bethel Park, PA (US);

Kaigham J. Gabriel, Pittsburgh, PA (US);

Assignee:

Akustica, Inc., Pittsburgh, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01P 15/125 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a micro-electromechanical-system (MEMS) device including a substrate; at least one semiconductor layer provided on the substrate; a circuit region including at least one chip containing drive/sense circuitry, the circuit region provided on the at least one semiconductor layer; a support structure attached to the substrate; at least one elastic device attached to the support structure; a proof-mass suspended by the at least one elastic device and free to move in at least one of the x-, y-, and z-directions; at least one top electrode provided on the at least one elastic device; and at least one bottom electrode located beneath the at least one elastic device such that an initial capacitance is generated between the at least one top and bottom electrodes, wherein the drive/sense circuitry, proof-mass, supporting structure, and the at least one top and bottom electrodes are fabricated on the at least one semiconductor layer.


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