The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Dec. 31, 2007
Applicants:
Alexander Fang, Goleta, CA (US);
Richard Jones, San Mateo, CA (US);
Hyundai Park, Goleta, CA (US);
Matthew Sysak, Santa Barbara, CA (US);
Inventors:
Alexander Fang, Goleta, CA (US);
Richard Jones, San Mateo, CA (US);
Hyundai Park, Goleta, CA (US);
Matthew Sysak, Santa Barbara, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/00 (2006.01); H01S 3/04 (2006.01); H01L 21/00 (2006.01); H01L 23/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
An optimized structure for heat dissipation is provided that may include two types of thermal shunts. The first type of thermal shunt employed involves using p and n metal contact layers to conduct heat away from the active region and into the silicon substrate. The second type of thermal shunt involves etching and backfilling a portion of the silicon wafer with poly-silicon to conduct heat to the silicon substrate.