The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Jan. 20, 2006
Dong-hun Kang, Yongin-si, KR;
Jeong-hee Han, Suwon-si, KR;
Wan-jun Park, Seoul, KR;
Won-joo Kim, Suwon-si, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Dong-Hun Kang, Yongin-si, KR;
Jeong-Hee Han, Suwon-si, KR;
Wan-Jun Park, Seoul, KR;
Won-Joo Kim, Suwon-si, KR;
Jae-Woong Hyun, Uijeongbu-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node.