The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Dec. 28, 2006
Rustom Irani, Santa Clara, CA (US);
Boaz Eitan, Ra'anana, IL;
Ilan Bloom, Haifa, IL;
Assaf Shappir, Kiryat Ono, IL;
Rustom Irani, Santa Clara, CA (US);
Boaz Eitan, Ra'anana, IL;
Ilan Bloom, Haifa, IL;
Assaf Shappir, Kiryat Ono, IL;
Saifun Semiconductors Ltd., Netanya, IL;
Abstract
An NVM cell such as an NROM cell is formed using a portion of one ONO stack and an adjacent portion of a neighboring NROM stack. A gate structure is formed between (and atop) the two ONO portions, or 'strips' (or 'stripes'). This provides having two physically separated charge storage regions (nitride “strips”, or “stripes”) in each memory cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile