The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Feb. 23, 2007
Koichiro Tanaka, Kanagawa, JP;
Hideto Ohnuma, Kanagawa, JP;
Chiho Kokubo, Kanagawa, JP;
Abstract
In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.