The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2009

Filed:

Sep. 11, 2006
Applicants:

Jerome Heurtier, Tours, FR;

Samuel Menard, Tours, FR;

Inventors:

Jerome Heurtier, Tours, FR;

Samuel Menard, Tours, FR;

Assignee:

STMicroelectronics S.A., Montrouge, FR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03L 5/00 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
Abstract

A monolithic interface circuit for providing a voltage, from a control circuit supplied by a supply voltage referenced to a reference voltage, to a terminal likely to be at a high voltage with respect to the reference voltage, comprising a high-voltage N-channel MOS transistor having its gate intended to receive a control signal referenced to the reference voltage and having its source intended to be connected to the reference voltage, and a high-voltage PNP transistor having its base connected to the drain of the MOS transistor, having its emitter intended to receive the supply voltage and having its collector intended to provide a voltage to the terminal likely to be at a high voltage.


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