The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Mar. 01, 2007
Kazuhiko Kusunoki, Amagasaki, JP;
Kazuhito Kamei, Hyogo, JP;
Nobuyoshi Yashiro, Amagasaki, JP;
Akihiro Yauchi, Nishinomiya, JP;
Yoshihisa Ueda, Kobe, JP;
Yutaka Itoh, Amagasaki, JP;
Nobuhiro Okada, Amagasaki, JP;
Kazuhiko Kusunoki, Amagasaki, JP;
Kazuhito Kamei, Hyogo, JP;
Nobuyoshi Yashiro, Amagasaki, JP;
Akihiro Yauchi, Nishinomiya, JP;
Yoshihisa Ueda, Kobe, JP;
Yutaka Itoh, Amagasaki, JP;
Nobuhiro Okada, Amagasaki, JP;
Sumitomo Metal Industries, Ltd., Osaka, JP;
Abstract
A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.