The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Apr. 14, 2008
Applicants:
Naoki Yamamoto, Kawaguchi, JP;
Yoshikazu Tanabe, Iruma, JP;
Hiroshige Kogayu, Fussa, JP;
Takehiko Yoshida, Tokai, JP;
Inventors:
Naoki Yamamoto, Kawaguchi, JP;
Yoshikazu Tanabe, Iruma, JP;
Hiroshige Kogayu, Fussa, JP;
Takehiko Yoshida, Tokai, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Formation of an WNfilmconstituting a barrier layer of a gate electrodeA having a polymetal structure is effected in an atmosphere containing a high concentration nitrogen gas, whereby release of N (nitrogen) from the WNfilmis suppressed in the heat treatment step after the formation of the gate electrodeA.