The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2009

Filed:

Mar. 10, 2006
Applicants:

Kiyonori Oyu, Tokyo, JP;

Koji Hamada, Tokyo, JP;

Kensuke Okonogi, Tokyo, JP;

Hideharu Miyake, Tokyo, JP;

Yasushi Kozuki, Tokyo, JP;

Masaharu Watanabe, Tokyo, JP;

Inventors:

Kiyonori Oyu, Tokyo, JP;

Koji Hamada, Tokyo, JP;

Kensuke Okonogi, Tokyo, JP;

Hideharu Miyake, Tokyo, JP;

Yasushi Kozuki, Tokyo, JP;

Masaharu Watanabe, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor chip including a semiconductor substrate provided with a semiconductor device region and a porous single crystal layer, where the semiconductor device region is formed on the main surface portion of the semiconductor substrate, and the porous single crystal layer is formed in an inner region on the backside of the semiconductor substrate, and is comprised of erosion holes extending continuously from the backside of the semiconductor substrate in an inward direction of the semiconductor substrate, oxide films formed on inner surfaces of the erosion holes, and a single crystal portion.


Find Patent Forward Citations

Loading…