The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Dec. 28, 2005
Chao-lung Lo, Hsinchu, TW;
Ta-hung Yang, Hsinchu, TW;
Chao-Lung Lo, Hsinchu, TW;
Ta-Hung Yang, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
The invention is directed to a method for controlling a critical dimension of a patterned photoresist layer. The method comprises steps of measuring a critical dimension of a raised pattern in a patterned photoresist layer after a photolithography process is performed on the photoresist layer. A determining process is performed to determine whether the critical dimension is within a critical dimension control limit range, wherein the critical dimension control limit range has a upper control limit and a lower control limit. An adjusting process is performed when the critical dimension is not within the critical dimension control limit range. When the critical dimension is smaller than the lower control limit, a photoresist reflow process is performed. When the critical dimension is larger than the upper control limit a photoresist trimming process is performed.