The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Dec. 30, 2004
Andras Kuthi, Thousand Oaks, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Eric Lenz, Pleasanton, CA (US);
Rajindar Dhindsa, San Jose, CA (US);
Lumin LI, Fremont, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Andras Kuthi, Thousand Oaks, CA (US);
Jisoo Kim, Pleasanton, CA (US);
Eric Lenz, Pleasanton, CA (US);
Rajindar Dhindsa, San Jose, CA (US);
Lumin Li, Fremont, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.