The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Jun. 25, 2004
Rainer Butendeich, Regensburg, DE;
Norbert Linder, Lappersdorf, DE;
Bernd Mayer, Regensburg, DE;
Ines Pietzonka, Regensburg, DE;
Rainer Butendeich, Regensburg, DE;
Norbert Linder, Lappersdorf, DE;
Bernd Mayer, Regensburg, DE;
Ines Pietzonka, Regensburg, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.