The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2009

Filed:

Jul. 13, 2006
Applicants:

Mieko Hasegawa, Kanagawa, JP;

Yasutaka Nakashiba, Kanagawa, JP;

Inventors:

Mieko Hasegawa, Kanagawa, JP;

Yasutaka Nakashiba, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor deviceincludes a semiconductor substrate, insulating interlayer group(first insulating interlayer group), insulating interlayer group(second insulating interlayer group), and seal ring(guard ring). The insulating interlayer groupis formed on the semiconductor substrate. The insulating interlayer groupis formed on the insulating interlayer group. The insulating interlayer groupis formed by an insulating material having a lower dielectric constant than that of the insulating interlayer group. The seal ringis provided so as to surround the circuit forming regions Dand D. The seal ringpenetrates through the interface between the insulating interlayer groupand the insulating interlayer groupand is provided apart from the semiconductor substrate


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