The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Jun. 09, 2006
Chi on Chui, San Mateo, CA (US);
Prashant Majhi, Austin, TX (US);
Wilman Tsai, Saratoga, CA (US);
Jack T. Kavalieros, Portland, OR (US);
Chi On Chui, San Mateo, CA (US);
Prashant Majhi, Austin, TX (US);
Wilman Tsai, Saratoga, CA (US);
Jack T. Kavalieros, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method to form a strain-inducing semiconductor region comprising three or more species of charge-neutral lattice-forming atoms is described. In one embodiment, formation of a strain-inducing semiconductor region, comprising three or more species of charge-neutral lattice-forming atoms, laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate. Thus, a strained crystalline substrate may be provided. In another embodiment, a semiconductor region with a crystalline lattice of three or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate.