The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Sep. 19, 2008
Jing Wu, Sunnyvale, CA (US);
Anchuan Wang, San Jose, CA (US);
Robert T. Chen, Fremont, CA (US);
Young S. Lee, San Jose, CA (US);
Jing Wu, Sunnyvale, CA (US);
Anchuan Wang, San Jose, CA (US);
Robert T. Chen, Fremont, CA (US);
Young S. Lee, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only CHand the additive gas includes Ar.