The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Mar. 01, 2007
Janos Fucsko, Boise, ID (US);
Grady S. Waldo, Boise, ID (US);
Joseph Wiggins, Boise, ID (US);
Prashant Raghu, Boise, ID (US);
Janos Fucsko, Boise, ID (US);
Grady S. Waldo, Boise, ID (US);
Joseph Wiggins, Boise, ID (US);
Prashant Raghu, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NHF and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NHF and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.