The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2009

Filed:

Oct. 17, 2005
Applicants:

Yewchung Sermon Wu, Taichung, TW;

Chih-yuan Hou, Chiayi, TW;

Guo-ren HU, Taipei County, TW;

Po-chih Liu, Taipei County, TW;

Inventors:

YewChung Sermon Wu, Taichung, TW;

Chih-Yuan Hou, Chiayi, TW;

Guo-Ren Hu, Taipei County, TW;

Po-Chih Liu, Taipei County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.


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