The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Apr. 17, 2007
Applicants:
Toshiaki Hongo, Amagasaki, JP;
Tetsu Osawa, Kanagawa, JP;
Inventors:
Toshiaki Hongo, Amagasaki, JP;
Tetsu Osawa, Kanagawa, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); C23C 8/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by supplying a nitrogen gas onto the silicon oxide film; and nitride-processing the silicon oxide film by the plasma so as to modify an upper portion of the silicon oxide film into the silicon nitride film.