The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2009

Filed:

Jun. 01, 2007
Applicants:

Tuung Luoh, Taipei, TW;

Ling-wu Yang, Hsinchu, TW;

Chin-ta Su, Yunlin, TW;

Ta-hung Yang, Miaoli, TW;

Kuang-chao Chen, Taipei, TW;

Inventors:

Tuung Luoh, Taipei, TW;

Ling-Wu Yang, Hsinchu, TW;

Chin-Ta Su, Yunlin, TW;

Ta-Hung Yang, Miaoli, TW;

Kuang-Chao Chen, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interconnection process is provided. The process includes the following steps. Firstly, a semiconductor base having at least a electrical conductive region is provided. Next, a dielectric layer with a contact hole is formed to cover the semiconductor base, wherein the contact hole exposes part of the electrical conductive region. Then, a thermal process is performed on the semiconductor base covered with the dielectric layer. Lastly, a conductive layer is formed on the dielectric layer, wherein the conductive layer is electrically connected to the electrical conductive region through the contact hole.


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