The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Feb. 27, 2006
Byoung-lyong Choi, Seoul, KR;
Wan-jun Park, Seoul, KR;
Eun-kyung Lee, Suwon-si, KR;
Jao-woong Hyun, Uijeongbu-si, KR;
Byoung-lyong Choi, Seoul, KR;
Wan-jun Park, Seoul, KR;
Eun-kyung Lee, Suwon-si, KR;
Jao-woong Hyun, Uijeongbu-si, KR;
Abstract
A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the first doping layer and a surface of the silicon substrate, forming a metal layer on the silicon substrate, forming catalysts by heating the metal layer within the microgrooves of the silicon substrate and growing the nano wires between the catalysts and the silicon substrate using a thermal process.