The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Oct. 21, 2005
Hiroki Yoshikawa, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Yoshinori Kinase, Joetsu, JP;
Satoshi Okazaki, Joetsu, JP;
Takashi Haraguchi, Tokyo, JP;
Masahide Iwakata, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Hiroki Yoshikawa, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Yoshinori Kinase, Joetsu, JP;
Satoshi Okazaki, Joetsu, JP;
Takashi Haraguchi, Tokyo, JP;
Masahide Iwakata, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Toppan Printing Co., Ltd., Tokyo, JP;
Abstract
A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.