The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2009

Filed:

Mar. 18, 2005
Applicants:

Suk-hun Choi, Gyeonggi-do, KR;

Byeong-ok Cho, Seoul, KR;

Yoon-ho Son, Gyeonggi-do, KR;

Sang-don Nam, Seoul, KR;

Inventors:

Suk-Hun Choi, Gyeonggi-do, KR;

Byeong-ok Cho, Seoul, KR;

Yoon-ho Son, Gyeonggi-do, KR;

Sang-don Nam, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming a metal contact structure include forming an interlayer insulating layer on a substrate, etching the interlayer insulating layer to form a hole, depositing a metal layer on the surface of the interlayer insulating layer including inside the hole, planarizing the metal layer to provide a buried portion of the metal layer in the hole and to remove portions of the metal layer outside of the hole, etching-back the buried portion of the metal layer in the hole such that some of the portion of the metal layer within the hole remains and depositing a conductive layer on the surface of the interlayer insulating layer and the portion of the metal layer that remains within the hole. Methods of forming a phase change memory device are also provided.


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