The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2009

Filed:

May. 25, 2006
Applicants:

Kunal Vaed, Poughkeepsie, NY (US);

Jae-sung Rieh, Fishkill, NY (US);

Richard P. Volant, New Fairfield, CT (US);

Francois Pagette, Wappingers Falls, NY (US);

Inventors:

Kunal Vaed, Poughkeepsie, NY (US);

Jae-Sung Rieh, Fishkill, NY (US);

Richard P. Volant, New Fairfield, CT (US);

Francois Pagette, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a device structure that comprises a substrate with front and back surfaces, and at least one semiconductor device with a first conductive structure located in the substrate and a second conductive structure located thereover. A first conductive contact is located over the front surface of the substrate and laterally offset from the first conductive structure. The first conductive contact is electrically connected to the first conductive structure by a conductive path that extends: (1) from the first conductive structure through the substrate to the back surface, (2) across the back surface, and (3) from the back surface through the substrate to the first conductive contact on the front surface. Further, a second conductive contact is located over the front surface and is electrically connected to the second conductive structure. The conductive path can be formed by lithography and etching followed by metal deposition.


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