The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Oct. 18, 2005
Steve Ming Ting, Bridgewater, NJ (US);
Chih-hao Wang, Hsinchu, TW;
Steve Ming Ting, Bridgewater, NJ (US);
Chih-Hao Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method is disclosed for forming silicided gate electrodes and unsilicided poly resistors. After patterning a semiconductor material for the gate electrode and resistor structures, a first dielectric layer is used to protect a poly resistor that is not to be silicided, then a first silicidation is performed for partially siliciding the gate electrode of the transistor. If the gate electrode is thick, a second dielectric layer is used to protect the resistor that is not to be silicided, then a second silicidation is performed for fully siliciding the gate electrode.