logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7622152 B1

PDFFull Text
Date of Patent:
Nov. 24, 2009

Filed:

Jul. 10, 2006

[object object]

Applicants:

Jae Soo Kim, Seoul, KR;

Kyeung Ho Kim, Seoul, KR;

Ji Young Byun, Seoul, KR;

Jin-kook Yoon, Seoul, KR;

Doo Yong Kim, Seoul, KR;

Jong Kown Lee, Suwon, KR;

Jong Chul Shin, Seoul, KR;

Dae Ho Rho, Jeonju, KR;

Inventors:

Jae Soo Kim, Seoul, KR;

Kyeung Ho Kim, Seoul, KR;

Ji Young Byun, Seoul, KR;

Jin-Kook Yoon, Seoul, KR;

Doo Yong Kim, Seoul, KR;

Jong Kown Lee, Suwon, KR;

Jong Chul Shin, Seoul, KR;

Dae Ho Rho, Jeonju, KR;

Assignee:

Korea Institute of Science and Technology, Seoul, KR;

Attorney:

Darby & Darby PC

Primary Examiner:

Timothy Meeks

Assistant Examiner:

Kelly M Gambetta

Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/26 (2006.01); B05D 1/40 (2006.01); B05D 3/02 (2006.01); B05D 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A MoSi—SiNcomposite coating which is coated on a surface of base materials. The MoSi—SiNcomposite coating on the surface of the base material can be formed by forming a MoN diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi—SiNcomposite coating by vapor-depositing of silicon on the surface of the MoN diffusion layer, or the MoSi—SiNcomposite coating on the surface of the base material can be formed by forming a MoSidiffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSidiffusion layer into a MoSidiffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a MoSi—SiNcomposite diffusion layer by vapor-depositing of nitrogen on the surface of the MosSidiffusion layer by the CVD method and forming a MoSi—SiNcomposite coating by vapor-depositing of silicon on the surface of the MoSi—SiNcomposite diffusion layer.

Find Patent Forward Citations

Loading…