The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Nov. 23, 2005
Applicants:
Changho Lee, Seoul, KR;
Hyun Min Shin, Seoul, KR;
Sun-hwan Kong, Hwaseong-si, KR;
Hae Yong Lee, Gwangmyeong-si, KR;
Inventors:
Changho Lee, Seoul, KR;
Hyun Min Shin, Seoul, KR;
Sun-Hwan Kong, Hwaseong-si, KR;
Hae Yong Lee, Gwangmyeong-si, KR;
Assignee:
Samsung Corning Co., Ltd., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 28/12 (2006.01); H01L 29/74 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt angle of C-axis to the <0001> direction per surface distance of 0.0022°/mm exhibits little bending deformation even at a thickness of 1 mm or more, and therefore, is beneficially used as a substrate for a luminescent device.