Method of fabricating cmos transistor and cmos transistor fabricated thereby

Abstract

A CMOS transistor includes first and second conductivity type MOS transistors. The first conductivity type MOS transistor includes elevated source and drain regions which abut a channel region in a semiconductor substrate and which are formed by elevated epitaxial layers, each including a first epitaxial layer formed in a first recessed of the semiconductor substrate and a second epitaxial layer formed on the first epitaxial layer and extending to a level that is above an upper surface of the semiconductor substrate. The second conductivity type MOS transistor includes recessed source and drain regions which abut a channel region of the semiconductor substrate and which are formed by recessed epitaxial layers, each including a first epitaxial layer formed in a second recess of the semiconductor substrate and a second epitaxial layer formed in the second recess on the first epitaxial layer.