The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Jan. 31, 2005
Jianjun Cao, Torrance, CA (US);
Ying Xiao, El Segundo, CA (US);
Kyle Spring, Temecula, CA (US);
Daniel M. Kinzer, El Segundo, CA (US);
Jianjun Cao, Torrance, CA (US);
Ying Xiao, El Segundo, CA (US);
Kyle Spring, Temecula, CA (US);
Daniel M. Kinzer, El Segundo, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
The active area of a current sense die is surrounded by a transition region which extends to the terminating periphery of the die. Spaced parallel MOSgated trenches extend through and define an active area. The trench positions in the transition region are eliminated or are deactivated, as by shorting to the MOSFET source of the trench, or by removing the source regions in areas of the transition region. By inactivating MOSgate action in the transition region surrounding the source, the device is made less sensitive to current ratio variation due to varying manufacturing tolerances. The gate to source capacitance is increased by surrounding the active area with an enlarged Pfield region which is at least five times the area of the active region, thereby to make the device less sensitive to ESD failure.