The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Jul. 26, 2006
Tobias Mono, Dresden, DE;
Frank Jakubowski, Dresden, DE;
Hermann Sachse, Dresden, DE;
Lars Voelkel, Dresden, DE;
Klaus-dieter Morhard, Dresden, DE;
Dietmar Henke, Radebeul, DE;
Tobias Mono, Dresden, DE;
Frank Jakubowski, Dresden, DE;
Hermann Sachse, Dresden, DE;
Lars Voelkel, Dresden, DE;
Klaus-Dieter Morhard, Dresden, DE;
Dietmar Henke, Radebeul, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of forming a doped portion of a semiconductor substrate includes: defining a plurality of protruding portions on the substrate surface, the protruding portions having a minimum height; providing a pattern layer above the substrate surface; removing portions of the pattern layer from predetermined substrate portions; performing an ion implantation procedure such that an angle of the ions with respect to the substrate surface is less than 90°, wherein the ions are stopped by the pattern layer and by the protruding portions, the predetermined substrate portions thereby being doped with the ions; and removing the pattern layer.