The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Aug. 10, 2005
Hiroki Yoshikawa, Niigata, JP;
Yukio Inazuki, Niigata, JP;
Yoshinori Kinase, Niigata, JP;
Satoshi Okazaki, Niigata, JP;
Takashi Haraguchi, Tokyo, JP;
Masahide Iwakata, Tokyo, JP;
Mikio Takagi, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Tadashi Saga, Tokyo, JP;
Hiroki Yoshikawa, Niigata, JP;
Yukio Inazuki, Niigata, JP;
Yoshinori Kinase, Niigata, JP;
Satoshi Okazaki, Niigata, JP;
Takashi Haraguchi, Tokyo, JP;
Masahide Iwakata, Tokyo, JP;
Mikio Takagi, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Tadashi Saga, Tokyo, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Toppan Printing Co., Ltd., Tokyo, JP;
Abstract
A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).