The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Jun. 29, 2007
Applicants:
Eun Seok Choi, Seongnam-si, KR;
SE Jun Kim, Changwon-si, KR;
Kyoung Hwan Park, Seoul, KR;
Hyun Seung Yoo, Icheon-si, KR;
Inventors:
Eun Seok Choi, Seongnam-si, KR;
Se Jun Kim, Changwon-si, KR;
Kyoung Hwan Park, Seoul, KR;
Hyun Seung Yoo, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of programming a charge trap type non-volatile memory device includes applying a program pulse to a selected memory cell, applying a detrap pulse to the selected memory cell, and applying a program verify pulse to the memory cell. The charge trap type non-volatile memory device includes a memory cell array including a charge trap memory cell, and a high voltage generator for supplying a detrap pulse to the charge trap memory cell.