The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Sep. 07, 2007
Petra Felsner, Munich, DE;
Thomas Schafbauer, Paris, FR;
Uwe Kerst, Berlin, DE;
Hans-joachim Barth, Munich, DE;
Erdem Kaltalioglu, Hsinchu, TW;
Petra Felsner, Munich, DE;
Thomas Schafbauer, Paris, FR;
Uwe Kerst, Berlin, DE;
Hans-Joachim Barth, Munich, DE;
Erdem Kaltalioglu, Hsinchu, TW;
Infineon Technologies AG, Munich, DE;
Abstract
In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a region of the interlevel dielectric. The region of interlevel dielectric is removed between the first metal line and the second metal line. A high-k dielectric is formed between the first metal line and the second metal line in the region where the interlevel dielectric was removed such that a capacitor is formed by the first metal line, the second metal line and the high-k dielectric.