The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Nov. 02, 2005
Junjung Kim, Fishkill, NY (US);
Jae-eun Park, Fishkill, NY (US);
Ja-hum Ku, LaGrangeville, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
Junjung Kim, Fishkill, NY (US);
Jae-eun Park, Fishkill, NY (US);
Ja-hum Ku, LaGrangeville, NY (US);
Daewon Yang, Hopewell Junction, NY (US);
Samsung Electronics Co., Ltd., , KR;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A stress nitride structure is formed on an integrated circuit field effect transistor by high density plasma (HDP) depositing a first stress nitride layer on the integrated circuit field effect transistor and then plasma enhanced chemical vapor depositing (PECVD) a second stress nitride layer on the first stress nitride layer. The first stress nitride layer is non-conformal and the second stress nitride layer is conformal. Related structures also are described.