The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7615202 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 10, 2009

Filed:

Feb. 28, 2006
Applicant:

Nobuaki Ito, Chiba, JP;

Inventor:

Nobuaki Ito, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01); C01B 33/037 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object of the invention is to provide a method for producing a large amount of inexpensive high purity silicon useful for a solar battery. Disclosed is a method for producing high purity silicon by migrating impurities in silicon to slag including performing a first slag purification of a first silicon, separating the slag from the first silicon after finishing the first slag purification, and feeding the separated slag to a second molten silicon in a second purification of the second silicon, wherein purity of said second silicon prior to purification is lower than purity of the first silicon after purification.


Find Patent Forward Citations

Ito, Nobuaki. (2009). Method for producing high purity silicon (U.S. Patent No. 7615202). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7615202

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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