The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Nov. 17, 2006
Applicants:
Luc Ouellet, Granby, CA;
Jonathan Lachance, Granby, CA;
Inventors:
Luc Ouellet, Granby, CA;
Jonathan Lachance, Granby, CA;
Assignee:
DALSA Semiconductor Inc., Waterloo, ON, CA;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C03B 37/07 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.