The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Apr. 05, 2007
Tetsuo Ono, Iruma, JP;
Katsumi Setoguchi, Ome, JP;
Hideyuki Yamamoto, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A plasma processing method for processing a sample by applying a high-frequency bias power periodically for each one period (T) which is divided along a time axis into a first sub-period (T) for which feedback control of a CD gain is executed, a second sub-period (T) for which feedback control of a select ratio is executed, and a third sub-period (T) for which feedback control of both the CD gain and the select ratio are executed. The applied power is set at a large value in the first sub-period, and a duty ratio T/T is controlled in accordance with the CD gain. A plurality of samples are processed with preset process conditions, and feedback control for each processing unit of the samples is executed in accordance with a processing state of each of the samples so that an average applied power over the one period (T) is constant.