The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2009
Filed:
Aug. 05, 2008
Shunpei Yamazaki, Tokyo, JP;
Sachiaki Teduka, Kanagawa, JP;
Makoto Furuno, Kanagawa, JP;
Satoshi Toriumi, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Koji Dairiki, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Sachiaki Teduka, Kanagawa, JP;
Makoto Furuno, Kanagawa, JP;
Satoshi Toriumi, Kanagawa, JP;
Yasuhiro Jinbo, Kanagawa, JP;
Koji Dairiki, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken, JP;
Abstract
In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.