The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Dec. 05, 2005
Anil K. Chinthakindi, Poughkeepsie, NY (US);
Robert A. Groves, Highland, NY (US);
Youri V. Tretiakov, South Burlington, VT (US);
Kunal Vaed, Poughkeepsie, NY (US);
Richard P. Volant, New Fairfield, CT (US);
Anil K. Chinthakindi, Poughkeepsie, NY (US);
Robert A. Groves, Highland, NY (US);
Youri V. Tretiakov, South Burlington, VT (US);
Kunal Vaed, Poughkeepsie, NY (US);
Richard P. Volant, New Fairfield, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids created by the removal of the portion of the interlevel dielectric layer. A signal transmission line is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes formed through the signal transmission line. The sacrificial material is removed so as to create an air gap beneath the signal transmission line.