The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Sep. 28, 2007
Dah-chuen Ho, Taichung, TW;
Chien-shao Tang, Hsinchu, TW;
Zhe-yi Wang, Hsinchu, TW;
Yu-chang Jong, Hsinchu, TW;
Dah-Chuen Ho, Taichung, TW;
Chien-Shao Tang, Hsinchu, TW;
Zhe-Yi Wang, Hsinchu, TW;
Yu-Chang Jong, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A lateral diffusion metal-oxide-semiconductor (LDMOS) structure comprises a gate, a source, a drain and a shallow trench isolation. The shallow trench isolation is formed between the drain and the gate to withstand high voltages, applied to the drain, and is associated with the semiconductor substrate to form a recess. As such, the surface of the shallow trench isolation is lower than the surface of the semiconductor substrate. Optionally, the surface of the shallow trench isolation is lower than the surface of the semiconductor substrate by 300-1500 angstroms.