The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2009

Filed:

Nov. 21, 2006
Applicants:

Masaaki Fujimori, Hatoyama, JP;

Tomihiro Hashizume, Hatoyama, JP;

Masahiko Ando, Hitachinaka, JP;

Inventors:

Masaaki Fujimori, Hatoyama, JP;

Tomihiro Hashizume, Hatoyama, JP;

Masahiko Ando, Hitachinaka, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract

A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are provided. The channel is formed of a semiconductor organic molecular crystal thin film which is highly oriented, and a TFT that is large in the mobility of the carriers that are conducted through the channel, and a lyophilic TFT pattern that is surrounded by a lyophobic region on a substrate are formed, and the configuration of the pattern is featured, whereby a solution of the semiconductor organic molecules which is supplied to an appropriate region of a substrate surface including the channel is spontaneously dried in an anisotropic fashion, and highly oriented crystal is grown in the drying process.


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