The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Jun. 20, 2007
Sang-soo Park, Ichon-shi, KR;
Chang-heon Park, Ichon-shi, KR;
Dong-ryeol Lee, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.