The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Jul. 27, 2006
Chul-sung Kim, Seongnam-si, KR;
Yu-gyun Shin, Seongnam-si, KR;
Bon-young Koo, Suwon-si, KR;
Sung-kweon Baek, Suwon-si, KR;
Young-jin Noh, Suwon-si, KR;
Chul-Sung Kim, Seongnam-si, KR;
Yu-Gyun Shin, Seongnam-si, KR;
Bon-Young Koo, Suwon-si, KR;
Sung-Kweon Baek, Suwon-si, KR;
Young-Jin Noh, Suwon-si, KR;
Abstract
In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.