The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Aug. 19, 2005
Tomohisa Iino, Kanagawa, JP;
Naomi Fukumaki, Kanagawa, JP;
Yoshitake Kato, Kanagawa, JP;
Tomoe Yamamoto, Kanagawa, JP;
Tomohisa Iino, Kanagawa, JP;
Naomi Fukumaki, Kanagawa, JP;
Yoshitake Kato, Kanagawa, JP;
Tomoe Yamamoto, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
In the process for manufacturing a semiconductor device of the present invention, a capacitor dielectric film is deposited via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas. The process for manufacturing a capacitor of the present invention includes obtaining a boundary temperature T (degree C.), at which an increase in a deposition rate for depositing the capacitor dielectric film as increasing the temperature is detected, on the basis of a correlation data of a deposition temperature in the atomic layer deposition employing the deposition gas with a deposition rate for depositing the capacitor dielectric film at the deposition temperature (Sand S); and depositing the capacitor dielectric film via the atomic layer deposition employing the deposition gas at a temperature within a range of from (T−20) (degree C.) to (T+20) (degree C.) (Sto S).