The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Aug. 27, 2003
Christopher Dennis Bencher, San Jose, CA (US);
Lee Luo, Fremont, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Lee Luo, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A variety of techniques may be employed alone or in combination to reduce the incidence of defects arising in dielectric stack structures formed by chemical vapor deposition (CVD). Incidence of a first defect type attributable to reaction between an unreacted species of a prior CVD step and reactants of a subsequent CVD step, is reduced by exposing a freshly-deposited dielectric layer to a plasma before any additional layers are deposited. Incidence of a second defect type attributable to the presence of incompletely vaporized CVD liquid precursor material, is reduced by exposing the freshly-deposited dielectric layer to a plasma, and/or by continuing the flow of carrier gas through an injection valve for a period beyond the conclusion of the CVD step.