The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Sep. 22, 2006
Applicants:
Philip L. Hower, Concord, MA (US);
David A. Walch, Bedford, NH (US);
John Lin, Chelmsford, MA (US);
Steven L. Merchant, Bedford, NH (US);
Inventors:
Philip L. Hower, Concord, MA (US);
David A. Walch, Bedford, NH (US);
John Lin, Chelmsford, MA (US);
Steven L. Merchant, Bedford, NH (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.