The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2009

Filed:

Oct. 11, 2007
Applicants:

Joseph A. Czagas, Palm Bay, FL (US);

Dustin A. Woodbury, Indian Harbour Beach, FL (US);

James D. Beasom, Melbourne Village, FL (US);

Inventors:

Joseph A. Czagas, Palm Bay, FL (US);

Dustin A. Woodbury, Indian Harbour Beach, FL (US);

James D. Beasom, Melbourne Village, FL (US);

Assignee:

Intersil Corporation, Melbourne, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming a diffused, doped backside layer on a device wafer oxide bonded to a handle wafer in an integrated circuit is provided. The method comprises forming a thermal bond oxide layer on a backside surface of the device wafer of the integrated circuit. Implanting the bond oxide with a diffusing dopant. Diffusing dopant from the bond oxide into the backside surface of the device wafer. Depositing an oxide layer on the bond oxide and bonding the deposited oxide layer to the handle wafer of the integrated circuit.


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