The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2009

Filed:

Apr. 06, 2007
Applicants:

Gregory J. Dunn, Arlington Heights, IL (US);

Jovica Savic, Downers Grove, IL (US);

Philip M. Lessner, Newberry, SC (US);

Albert K. Harrington, Fountain Inn, SC (US);

Inventors:

Gregory J. Dunn, Arlington Heights, IL (US);

Jovica Savic, Downers Grove, IL (US);

Philip M. Lessner, Newberry, SC (US);

Albert K. Harrington, Fountain Inn, SC (US);

Assignees:

Kemet Electronics Corporation, Greenville, SC (US);

Motorola, Inc., Shamburg, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01G 4/228 (2006.01);
U.S. Cl.
CPC ...
Abstract

High capacitance value capacitors are formed using bimetal foils of an aluminum layer attached to a copper layer. The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum foil is temporarily protected using aluminum or other materials, to form a sandwich. The exposed aluminum is treated to increase the surface area of the aluminum by at least one order of magnitude, while not attacking any portion of the protected metal. When the sandwich is separated, the treated bimetal foil is formed into a capacitor, where the copper layer is one electrode of the capacitor and the treated aluminum layer is in intimate contact with a dielectric layer of the capacitor.


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